• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43A
• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
• IDM Pulsed Drain Current � 150A
• PD @TC = 25°C Power Dissipation 200 W
• Linear Derating Factor 1.3 W/°C
• VGS Gate-to-Source Voltage ± 20 V
• EAS Single Pulse Avalanche Energy‚ 590 mJ
• IAR Avalanche Current� 22 A
• EAR Repetitive Avalanche Energy� 20 mJ
• dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
• TJ Operating Junction and -55 to + 175
• TSTG Storage Temperature Range
• Soldering Temperature, for 10 seconds: 300ºC (1.6mm from case)
• Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
• Absolute Maximum Ratings

Parameter Typ. Max. Units

• RqJC Junction-to-Case –– 0.75 °C/W
• RqCS Case-to-Sink, Flat, Greased Surface –– 0.50 °C/W
• RqJA Junction-to-Ambient 62 °C/W
• VDSS = 150V
• RDS (on) = 0.042W
• ID = 43A